Si7414DN Vishay Intertechnology, Si7414DN Datasheet

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Si7414DN

Manufacturer Part Number
Si7414DN
Description
N-channel 60-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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SI7414DN
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Notes
a.
Document Number: 71738
S-04764—Rev. A, 08-Oct-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
60
(V)
8
3.30 mm
D
7
D
6
PowerPAKt 1212-8
D
J
a
0.036 @ V
0.025 @ V
= 150_C)
Bottom View
a
5
Parameter
Parameter
D
r
DS(on)
_
a
GS
GS
1
S
(W)
N-Channel 60-V (D-S) MOSFET
= 4.5 V
= 10 V
2
S
a
3
S
3.30 mm
4
G
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
8.7
7.3
(A)
_
Symbol
Symbol
T
R
R
V
J
V
E
I
I
P
DM
, T
thJC
I
I
AS
thJA
DS
GS
D
S
AS
D
stg
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
D PowerPAKt 1212-8 Package with Low
D PWM Optimized
D Primary Side Switch
D Synchronous Rectifier
D Motor Drives
G
1.07-mm Profile
10 secs
Typical
N-Channel MOSFET
8.7
7.0
3.2
3.8
2.0
1.9
26
65
D
S
–55 to 150
"20
60
30
19
18
Steady State
Maximum
Vishay Siliconix
5.6
4.4
1.3
1.5
0.8
2.4
33
81
Si7414DN
www.vishay.com
Unit
Unit
_C/W
C/W
_C
mJ
W
V
A
1

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