Si7434DP Vishay Intertechnology, Si7434DP Datasheet
Si7434DP
Manufacturer Part Number
Si7434DP
Description
N-channel 250-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7434DP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7434DP
Manufacturer:
TOS
Quantity:
1 498
Part Number:
Si7434DP-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Part Number:
Si7434DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72579
S-32408—Rev. A, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
250
250
(V)
J
8
ti
6.15 mm
D
Ordering Information: Si7434DP-T1—E3
Creepage Clearance: 30 mils
t A bi
7
D
6
D
J
J
a
a
PowerPAK SO-8
0.155 @ V
0.162 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
r
D
DS(on)
a
a
GS
GS
1
N-Channel 250-V (D-S) MOSFET
(W)
S
= 10 V
= 6 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
D
New Product
= 25_C
= 70_C
= 25_C
= 70_C
3.8
3.7
(A)
Symbol
Symbol
FEATURES
D PWM-OptimizedTrenchFETr Power MOSFET
D 100% R
D Avalanche Tested
APPLICATIONS
D Primary Side Switch In:
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
D
D
stg
g
Tested
N-Channel MOSFET
10 secs
Typical
3.8
3.0
4.3
5.2
3.3
1.5
19
52
G
−55 to 150
"20
250
8.4
40
13
Steady State
Maximum
D
S
Vishay Siliconix
2.3
1.8
1.6
1.9
1.2
1.8
24
65
Si7434DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1
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