Si7456DP Vishay Intertechnology, Si7456DP Datasheet
Si7456DP
Manufacturer Part Number
Si7456DP
Description
N-channel 100-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7456DP.pdf
(4 pages)
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SI7456DP
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Notes
a.
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
100
100
(V)
J
8
ti
6.15 mm
D
Ordering Information: Si7456DP-T1
t A bi
7
D
6
D
J
J
a
a
PowerPAK SO-8
0.028 @ V
0.025 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
GS
GS
1
N-Channel 100-V (D-S) MOSFET
S
(W)
= 6.0 V
= 10 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 85_C
= 25_C
= 85_C
D
9.3
8.8
(A)
Symbol
Symbol
G
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
thJC
I
I
AS
I
thJA
DS
GS
D
D
AS
S
D
D
N-Channel MOSFET
stg
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
D PWM Optimized for Fast Switching
D 100% R
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V, Full-/Half-Bridge DC/DC
D Industrial and 42-V Automotive
Package with Low 1.07-mm Profile
D
S
10 secs
Typical
9.3
6.7
4.3
5.2
2.7
1.5
g
19
52
Tested
- 55 to 150
"20
100
40
30
45
Steady State
Maximum
Vishay Siliconix
5.7
4.1
1.6
1.9
1.0
1.8
24
65
Si7456DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1
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