Si7462DP Vishay Intertechnology, Si7462DP Datasheet

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Si7462DP

Manufacturer Part Number
Si7462DP
Description
N-channel 200-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7462DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7462DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72136
S-03533—Rev. A, 24-Mar-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
200
200
(V)
J
ti
t A bi
8
6.15 mm
D
J
J
a
a
0.142 @ V
0.130 @ V
Ordering Information: Si7462DP-T1
= 150_C)
= 150_C)
t
a
a
7
D
Parameter
Parameter
r
DS(on)
6
D
PowerPAK SO-8
a
a
GS
GS
5
Bottom View
N-Channel 200-V (D-S) MOSFET
(W)
= 6.0 V
D
= 10 V
a
1
S
2
S
3
A
S
5.15 mm
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
4
A
A
A
A
G
I
= 25_C
= 85_C
= 25_C
= 85_C
D
4.1
3.9
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
thJC
I
I
AS
I
thJA
DS
GS
D
D
AS
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
D PWM Optimized For Fast Switching
APPLICATIONS
D Primary Side Switch
G
Package with Low 1.07-mm Profile
N-Channel MOSFET
10 secs
Typical
4.1
3.0
4.0
4.8
2.6
1.7
21
55
D
S
- 55 to 150
"20
200
1.8
12
6
Steady State
Maximum
Vishay Siliconix
2.6
1.9
1.6
1.9
1.0
2.1
26
65
Si7462DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1

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