Si7464DP Vishay Intertechnology, Si7464DP Datasheet
Si7464DP
Manufacturer Part Number
Si7464DP
Description
N-channel 200-V (D-S) Fast Switching MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7464DP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
Si7464DP-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
1 855
Part Number:
Si7464DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7464DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
10 286
Part Number:
Si7464DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7464DP-TI-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 72052
S-22097—Rev. A, 02-Dec-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Source Current
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Guaranteed by design, not subject to production testing.
DS
200
(V)
b
N-Channel 200-V (D-S) Fast Switching MOSFET
b
8
6.15 mm
D
J
a
= 150_C)
0.24 @ V
a
0.26 @ V
7
Parameter
Parameter
r
D
DS(on)
_
6
D
PowerPAKt SO-8
a
GS
GS
Bottom View
5
(W)
= 10 V
= 6 V
D
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
T
T
T
T
t v 10 sec
4
A
A
A
A
I
New Product
G
= 25_C
= 70_C
= 25_C
= 70_C
D
2.8
2.7
(A)
Symbol
Symbol
T
R
R
V
V
J
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
DS
GS
D
S
AS
D
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch
stg
Package with Low 1.07-mm Profile
10 secs
Typical
G
2.8
2.2
3.5
4.2
2.6
2.9
25
60
N-Channel MOSFET
-55 to 150
"20
0.45
200
8
3
D
S
Steady State
Maximum
Vishay Siliconix
1.8
1.5
1.5
1.8
1.1
3.5
30
70
Si7464DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
V
A
1
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