Si7495DP Vishay Intertechnology, Si7495DP Datasheet - Page 2

• Manufacturer Part Number: Si7495DP
• Description: P-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7495DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
b
0
0
Parameter
a
a
V
1
V
GS
DS
a
Output Characteristics
= 5 thru 2 V
- Drain-to-Source Voltage (V)
a
J
2
= 25_C UNLESS OTHERWISE NOTED)
3
1.5 V
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
R
g
Q
t
SD
t
t
rr
fs
gs
gd
r
G
f
g
4
New Product
5
I
V
V
D
DS
DS
^ - 1 A, V
I
V
F
= - 9.6 V, V
= - 6 V, V
V
V
V
V
V
DS
V
= - 2.9 A, di/dt = 100 A/ms
GS
I
GS
GS
V
DS
DS
S
V
V
Test Condition
DS
DD
DD
DS
v - 5 V, V
= - 4.5 A, V
= - 4.5 V, I
= - 9.6 V, V
= - 2.5 V, I
= - 1.8 V, I
= - 15 V, I
= V
= - 6 V, R
= - 6 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, R
= - 5 V, I
D
= 0 V, T
GS
GS
D
D
D
GS
D
= - 1 mA
L
L
GS
= - 21 A
= - 19 A
= - 16 A
= - 4.5 V
= - 21 A
= 6 W
= 6 W
= "8 V
= 0 V
= 0 V
D
J
50
40
30
20
10
= - 21 A
G
= 70_C
0
0.00
= 6 W
0.25
V
0.50
GS
Transfer Characteristics
Min
- 0.4
- 40
- Gate-to-Source Voltage (V)
0.75
25_C
T
C
= 125_C
1.00
0.0054
0.0065
0.0088
Typ
- 0.65
10.5
100
200
350
230
110
2.7
80
93
22
S-31417—Rev. A, 07-Jul-03
1.25
Document Number: 72277
0.0065
"100
Max
0.008
0.011
1.50
- 55_C
- 0.9
- 1.1
140
150
300
530
350
165
- 10
- 1
1.75
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
2.00