Si7501DN Vishay Intertechnology, Si7501DN Datasheet

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Si7501DN

Manufacturer Part Number
Si7501DN
Description
Complementary 30-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7501DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7501DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Case)
Surface Mounted on 1” x 1” FR4 Board.
i
N Channel
N-Channel
P-Channel
P-Channel
J
ti
8
3.30 mm
D
t A bi
Ordering Information: Si7501DN-T1—E3
7
Parameter
D
V
DS
6
J
J
a
a
−30
−30
30
30
D
= 150_C)
= 150_C)
t
a
a
PowerPAK 1212-8
(V)
Bottom View
5
D
Complementary 30-V (D-S) MOSFET
Parameter
a
a
0.051 @ V
1
0.050 @ V
0.075 @ V
0.035 @ V
S1
T
T
T
T
r
2
a
DS(on)
A
A
A
A
G1
= 25_C
= 70_C
= 25_C
= 70_C
3
GS
GS
GS
GS
S2
(W)
3.30 mm
= −10 V
= 4.5 V
= −6 V
= 10 V
4
G2
A
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
J
V
V
I
P
P
, T
DM
I
I
I
GS
DS
D
D
S
D
D
stg
Steady State
Steady State
t v 10 sec
I
D
−6.4
−5.3
7.7
6.5
(A)
10 secs
−6.4
−5.1
−2.6
3.1
3
P-Channel
"25
Symbol
−30
−25
Steady State
R
R
R
thJC
thJA
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
APPLICATIONS
D Backlight Inverter
D DC/DC Converter
−4.5
−3.6
−1.3
1.6
1.0
Package with Low 1.07-mm Profile
− 4-Cell Battery
−55 to 150
G
G
Typical
1
2
32
65
5
10 secs
7.7
4.7
2.6
3.1
2
S
S
1
2
N-Channel
Maximum
Vishay Siliconix
"20
30
25
6.3
40
81
Steady State
D
Si7501DN
5.4
4.3
1.3
1.6
1.0
www.vishay.com
Unit
_C/W
C/W
Unit
_C
W
W
V
V
A
A
1

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