SI7686DP Vishay Intertechnology, SI7686DP Datasheet
SI7686DP
Manufacturer Part Number
SI7686DP
Description
N-channel 30-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7686DP.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7686DP
Manufacturer:
SILICONIX
Quantity:
20 000
Part Number:
SI7686DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a.
b.
c.
d.
e.
f.
Document Number: 73451
S–51334—Rev. A, 25-Jul-05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
Package Limited.
Surface mounted on 1” x 1” FR4 board.
t = 10 sec
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Maximum under steady state conditions is 70 _C/W.
30
30
(V)
0.0095 @ V
0.014 @ V
Ordering Information: Si7686DP-T1—E3 (Lead (Pb)-Free)
8
6.15 mm
D
r
DS(on)
7
D
GS
GS
6
J
J
(W)
= 150_C)
= 150_C)
D
= 4.5 V
b, f
= 10 V
PowerPAK SO-8
Parameter
Parameter
Bottom View
5
D
1
N-Channel 30-V (D-S) MOSFET
I
D
S
(A)
35
35
2
S
d, e
a
3
S
5.15 mm
Q
4
9 2 nC
9.2 nC
g
G
(Typ)
Steady State
t p 10 sec
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
New Product
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 25_C
= 25_C
= 70_C
= 25_C
= 70_C
_
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Optimized for High-Side Synchronous Rectifier
D 100% R
D DC/DC Converters
with Low 1.07mm Profile
Operation
Symbol
Symbol
T
R
R
J
V
V
I
P
P
, T
DM
thJC
g
I
I
I
I
thJA
DS
GS
D
D
S
S
D
D
Tested
stg
Typical
2.8
G
21
N-Channel MOSFET
–55 to 150
17.9
14.3
Limit
4.2
3.2
"20
31.5
37.9
24.2
5
260
35
35
30
50
b, c
b, c
b, c
a
a
b, c
b, c
D
S
Maximum
Vishay Siliconix
3.3
25
Si7686DP
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
_C
W
W
V
V
A
RoHS
1
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