SI7636DP Vishay Intertechnology, SI7636DP Datasheet

SI7636DP

Manufacturer Part Number

SI7636DP

Description

N-channel 30-V (d-s) Mosfet

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7636DP.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7636DP

Manufacturer:

MOT

Quantity:

11 167

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7636DP

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7636DP-T1

Manufacturer:

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7636DP-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SI7636DP-T1-E3

Quantity:

2 500

Company:

BOSTOCK HK LIMITED

Part Number:

SI7636DP-T1-GE3

Manufacturer:

VISHAY

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7636DP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 3
Download datasheet (177Kb)

CHARACTERISTICS

DESCRIPTION

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 72791

S-60145Rev. B, 13-Feb-06

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS.

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-V to 10-V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

N-Channel 30-V (D-S) MOSFET

The subcircuit

SPICE Device Model Si7636DP

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

Characteristics

model. All model parameter values are optimized

Vishay Siliconix

www.vishay.com

Related parts for SI7636DP

Related keywords

SI7636DP datasheet
SI7636DP data sheet
SI7636DP pdf datasheet
SI7636DP component
SI7636DP part
SI7636DP distributor
SI7636DP RoHS
SI7636DP datasheet download