Si7705DN Vishay Intertechnology, Si7705DN Datasheet

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Si7705DN

Manufacturer Part Number
Si7705DN
Description
Single P-channel 20-V (D-S) MOSFET With Schottky Diode
Manufacturer
Vishay Intertechnology
Datasheet

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Part Number:
SI7705DN
Manufacturer:
SILICONX
Quantity:
850
Part Number:
Si7705DN-T1
Manufacturer:
IDT
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800
Part Number:
Si7705DN-T1
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Part Number:
Si7705DN-T1-E3
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Quantity:
20 000
Notes
a.
Document Number: 71607
S-22520—Rev. B, 27-Jan-03
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
V
V
Surface Mounted on 1” x1” FR4 Board.
DS
KA
- 20
20
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
(V)
(V)
8
K
3.30 mm
Diode Forward Voltage
Ordering Information: Si7705DN-T1
7
K
0.048 @ V
0.068 @ V
0.090 @ V
6
0.48 V @ 0.5 A
PowerPAK 1212-8
r
D
J
J
DS(on)
Bottom View
= 150_C) (MOSFET)
= 150_C) (MOSFET)
5
V
Parameter
D
f
GS
GS
GS
(V)
(W)
= - 4.5 V
= - 2.5 V
= - 1.8 V
a
a
1
a
a
A
2
A
3
a
a
S
3.30 mm
4
a
G
I
I
D
F
- 5.3
- 4.6
- 6.3
1.0
A
(A)
(A)
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
T
T
A
A
A
A
A
A
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
Symbol
T
J
V
V
V
I
I
P
P
, T
DM
FM
I
I
I
I
GS
DS
KA
D
D
S
F
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Ultra-Low Thermal Resistance, PowerPAKr
APPLICATIONS
D Charger Switching
P-Channel MOSFET
Package with Low 1.07-mm Profile
10 sec
- 6.3
- 4.5
- 2.3
2.8
1.5
2.0
1.0
D
S
- 55 to 150
"8
- 20
- 20
20
1.0
7
Vishay Siliconix
Steady State
K
A
- 4.3
- 3.1
- 1.1
1.3
0.7
1.1
0.6
Si7705DN
www.vishay.com
Unit
_C
W
W
V
V
A
A
1

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