Si7806DN Vishay Intertechnology, Si7806DN Datasheet - Page 2

• Manufacturer Part Number: Si7806DN
• Description: N-channel 30-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Si7806DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
35
30
25
20
15
10
5
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
V
Output Characteristics
GS
– Drain-to-Source Voltage (V)
a
= 10 thru 4 V
1.5
a
a
2.0
2.5
Symbol
J
V
r
3.0
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
t
SD
t
rr
fs
gs
gd
r
gt
f
g
g
3.5
3 V
4.0
New Product
V
V
V
DS
DS
DS
I
D
DS
^ 1 A, V
= 15 V, V
= 15 V, V
I
F
V
= 24 V, V
V
V
V
V
V
V
V
V
DS
= 3.2 A, di/dt = 100 A/ms
GS
GS
DS
I
DS
DS
Test Condition
S
DS
DD
DD
= 3.2 A, V
= 0 V, V
= 10 V, I
= V
w 5 V, V
= 4.5 V, I
= 15 V, I
= 24 V, V
= 15 V, R
= 15 V, R
GEN
GS
GS
GS
GS
GS
, I
= 4.5 V, I
= 10 V, I
= 10 V, R
GS
= 0 V, T
D
D
GS
D
D
GS
GS
L
L
= 250 mA
= 14.4 A
= "20 V
= 12.6 A
= 14.4 A
= 15 W
= 15 W
= 10 V
= 0 V
= 0 V
D
D
J
D
G
= 55_C
= 14.4 A
40
35
30
25
20
15
10
= 14.4 A
= 6 W
5
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
– Gate-to-Source Voltage (V)
Min
1.0
40
1.5
T
2.0
0.0145
25_C
0.009
C
Typ
0.77
8.5
3.6
3.0
34
19
12
25
10
35
= 125_C
2
8
S-20805—Rev. A, 17-Jun-02
Document Number: 71869
2.5
0.0175
Max
"100
0.011
1.2
3.0
11
24
15
20
40
20
70
3
1
5
–55_C
3.5
Unit
nC
nA
m
mA
ns
W
W
W
V
A
S
V
4.0