Si7810DN Vishay Intertechnology, Si7810DN Datasheet
Si7810DN
Manufacturer Part Number
Si7810DN
Description
N-channel 100-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7810DN.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7810DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7810DN-T1-GE3
Manufacturer:
Exar
Quantity:
27
Part Number:
Si7810DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 70689
S-04559—Rev. A, 27-Aug-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
100
(V)
8
3.30 mm
D
7
D
6
PowerPAKt 1212-8
D
J
a
0.062 @ V
= 150_C)
0.084 @ V
Bottom View
a
5
Parameter
Parameter
D
r
DS(on)
_
a
GS
1
GS
N-Channel 100-V (D-S) MOSFET
S
(W)
= 10 V
= 6 V
2
S
a
3
S
3.30 mm
4
G
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
5.4
4.6
(A)
_
Symbol
Symbol
T
R
R
V
J
V
E
I
I
P
DM
, T
thJC
I
I
AS
thJA
DS
GS
D
S
AS
D
stg
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
D PowerPAKt 1212-8 Package with Low
D PWM Optimized
D Primary Side Switch
D In-Rush Current Limiter
G
1.07-mm Profile
10 secs
Typical
N-Channel MOSFET
5.4
4.3
3.2
3.8
2.0
1.9
26
65
D
S
–55 to 150
"20
100
20
19
18
Steady State
Maximum
Vishay Siliconix
3.4
2.8
1.3
1.5
0.8
2.4
33
81
Si7810DN
www.vishay.com
Unit
Unit
_C/W
C/W
_C
mJ
W
V
A
1
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