Si7820DN Vishay Intertechnology, Si7820DN Datasheet

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Si7820DN

Manufacturer Part Number
Si7820DN
Description
N-channel 200-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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Part Number:
Si7820DN-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
32 751
Part Number:
Si7820DN-T1-E3
Manufacturer:
VISHAY
Quantity:
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Part Number:
Si7820DN-T1-GE3
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TI
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Part Number:
Si7820DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
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Part Number:
Si7820DN-T1-GE3
Quantity:
800
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Part Number:
Si7820DN-T1-GE3
Quantity:
70 000
Notes
a.
Document Number: 72581
S-32411—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
200
200
(V)
J
8
ti
3.30 mm
D
t A bi
7
D
6
D
J
J
a
a
PowerPAK 1212-8
0.240 @ V
= 150_C)
= 150_C)
t
0.250 @ V
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
GS
1
GS
N-Channel 200-V (D-S) MOSFET
S
(W)
= 10 V
= 6 V
2
S
a
3
S
3.30 mm
Ordering Information: Si7820DN-T1—E3
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
2.6
2.5
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
D
D
FEATURES
D PWM-Optimized TrenchFETr Power MOSFET
D 100% R
D Avalanche Tested
APPLICATIONS
D Primary Side Switch
stg
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
G
g
10 secs
Typical
N-Channel MOSFET
Tested
2.6
2.1
3.2
3.8
2.0
1.9
26
65
D
S
−55 to 150
"20
200
3.5
0.6
10
Steady State
Maximum
Vishay Siliconix
1.7
1.3
1.3
1.5
0.8
2.4
33
81
Si7820DN
www.vishay.com
Unit
Unit
_C/W
C/W
_C
mJ
W
W
V
V
A
A
1

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