Si7840DP Vishay Intertechnology, Si7840DP Datasheet
Si7840DP
Manufacturer Part Number
Si7840DP
Description
N-channel 30-V (D-S) Fast Switching MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7840DP.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7840DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7840DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71624
S-31728—Rev. D, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
t A bi
N-Channel 30-V (D-S) Fast Switching MOSFET
8
6.15 mm
D
J
J
a
a
0.0095 @ V
0.014 @ V
= 150_C)
= 150_C)
t
Ordering Information: Si7840DP-T1
a
a
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
GS
PowerPAK SO-8
GS
Bottom View
5
(W)
= 4.5 V
D
= 10 V
a
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
4
A
A
A
A
I
G
= 25_C
= 70_C
= 25_C
= 70_C
D
18
15
(A)
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D DC/DC Converters
D Optimized for “High-Side” Synchronous
Package with Low 1.07-mm Profile
Rectifier Operation
10 secs
Typical
G
4.1
5.0
3.2
2.1
18
14
20
52
N-Channel MOSFET
g
Tested
-55 to 150
"20
30
40
40
80
D
S
Steady State
Maximum
Vishay Siliconix
1.6
1.9
1.2
2.6
25
65
11
8
Si7840DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1
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