Si7844DP Vishay Intertechnology, Si7844DP Datasheet
Si7844DP
Manufacturer Part Number
Si7844DP
Description
Dual N-channel 30-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7844DP.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
SI7844DP
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7844DP-T1
Manufacturer:
MITSUMI
Quantity:
1 610
Part Number:
Si7844DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7844DP-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
26 500
Part Number:
Si7844DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71328
S-31728—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
8
D1
Ordering Information: Si7844DP-T1
6.15 mm
ti
7
D1
t A bi
PowerPAKr SO-8
6
D2
Bottom View
5
J
J
a
a
0.030 @ V
0.022 @ V
= 150_C)
= 150_C)
t
a
a
D2
Parameter
Parameter
r
DS(on)
Dual N-Channel 30-V (D-S) MOSFET
1
a
a
S1
GS
GS
(W)
= 4.5 V
2
= 10 V
G1
a
3
S2
5.15 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
8.5
10
(A)
G
1
Symbol
Symbol
N-Channel MOSFET
T
R
R
R
V
V
J
I
P
P
, T
DM
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
D
1
S
1
D
1
FEATURES
D TrenchFETr Power MOSFET
D 100% R
10 secs
Typical
8.0
2.9
3.5
2.2
3.9
10
26
60
g
Tested
-55 to 150
"20
G
30
20
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
D
6.4
5.1
1.1
1.4
0.9
5.5
35
85
2
S
2
D
2
Si7844DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1
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