Si7856DP Vishay Intertechnology, Si7856DP Datasheet - Page 3

• Manufacturer Part Number: Si7856DP
• Description: N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71850
S-31727—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
6
5
4
3
2
1
0
50
10
1
0.00
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 20 A
0.2
10
10
= 15 V
V
Q
SD
T
g
J
= 150_C
- Total Gate Charge (nC)
- Source-to-Drain Voltage (V)
I
D
V
0.4
GS
- Drain Current (A)
Gate Charge
20
20
= 4.5 V
0.6
30
30
0.8
V
GS
T
40
40
J
= 10 V
= 25_C
1.0
50
50
1.2
0.020
0.016
0.012
0.008
0.004
0.000
7000
5600
4200
2800
1400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
-25
rss
V
I
D
GS
= 20 A
V
2
V
GS
6
= 10 V
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
Capacitance
25
C
4
12
oss
I
Vishay Siliconix
D
C
= 20 A
50
iss
6
18
75
Si7856DP
100
www.vishay.com
8
24
125
10
150
30
3