Si7864DP Vishay Intertechnology, Si7864DP Datasheet

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Si7864DP

Manufacturer Part Number

Si7864DP

Description

N-channel 20-V (D-S) MOSFET

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7864DP.pdf (4 pages)

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Notes

a.

Document Number: 71793

S-31727—Rev. B, 18-Aug-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

20

20

(V)

J

8

ti

6.15 mm

D

Ordering Information: Si7864DP-T1

t A bi

7

D

6

D

PowerPAKr SO-8

J

J

0.0035 @ V

0.0047 @ V

a

a

= 150_C)

= 150_C)

t

Bottom View

a

a

5

Parameter

Parameter

D

r

DS(on)

a

a

GS

GS

1

S

(W)

N-Channel 20-V (D-S) MOSFET

= 4.5 V

= 2.5 V

2

S

a

3

S

5.15 mm

4

G

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

T

T

T

T

t v 10 sec

A

A

A

A

I

= 25_C

= 70_C

= 25_C

= 70_C

D

29

25

(A)

Symbol

Symbol

T

R

R

R

V

V

J

I

P

P

, T

DM

thJC

I

I

I

thJA

DS

GS

D

D

S

D

D

stg

FEATURES

D TrenchFETr Power MOSFETS: 2.5-V Rated

D Low 3.5-mW r

D PWM (Q

D 100% R

APPLICATIONS

D Low-Side MOSFET in Synchronous Buck

DC/DC Converters in Servers and Routers

G

10 secs

Typical

N-Channel MOSFET

4.5

5.4

3.4

1.0

29

25

18

50

g

gd

Tested

-55 to 150

and R

D

S

"8

DS(on)

20

60

Steady State

g

) Optimized

Maximum

Vishay Siliconix

1.6

1.9

1.2

1.5

18

14

23

65

Si7864DP

www.vishay.com

Unit

Unit

_C/W

C/W

_C

W

W

V

V

A

A

1

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