Si7868DP Vishay Intertechnology, Si7868DP Datasheet

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Si7868DP

Manufacturer Part Number

Si7868DP

Description

N-channel 20-V (D-S) MOSFET

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7868DP.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

Si7868DP-T1

Manufacturer:

HITACHI

Quantity:

90

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

Si7868DP-T1

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

Si7868DP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Download datasheet (41Kb)

Notes

a.

Document Number: 71849

S-31727—Rev. C, 18-Aug-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

20

20

(V)

J

8

ti

6.15 mm

D

Ordering Information: Si7868DP-T1

t A bi

7

D

6

D

0.00275 @ V

PowerPAKr SO-8

0.00225 @ V

J

J

a

a

= 150_C)

= 150_C)

t

Bottom View

a

a

5

Parameter

Parameter

D

r

DS(on)

a

a

1

GS

GS

S

(W)

N-Channel 20-V (D-S) MOSFET

= 4.5 V

= 10 V

2

S

a

3

S

5.15 mm

4

G

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

T

T

T

T

t v 10 sec

A

A

A

A

I

= 25_C

= 70_C

= 25_C

= 70_C

D

29

25

(A)

Symbol

Symbol

T

R

R

R

V

V

J

I

P

P

, T

DM

thJC

I

I

I

thJA

DS

GS

D

D

S

D

D

stg

FEATURES

D TrenchFETr Power MOSFET

D Low r

D PWM (Q

D 100% R

APPLICATIONS

D Low Output Voltage Synchronous Rectifier

G

10 secs

Typical

N-Channel MOSFET

4.5

5.4

3.4

1.0

29

25

18

50

DS(on)

g

gd

Tested

-55 to 150

and R

D

S

"16

20

60

Steady State

g

) Optimized

Maximum

Vishay Siliconix

1.6

1.9

1.2

1.5

18

14

23

65

Si7868DP

www.vishay.com

Unit

Unit

_C/W

C/W

_C

W

W

V

V

A

A

1

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