Si7884DP Vishay Intertechnology, Si7884DP Datasheet
Si7884DP
Manufacturer Part Number
Si7884DP
Description
N-channel 40-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7884DP.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7884DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7884DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71855
S-32077—Rev. D, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
40
40
(V)
J
8
ti
6.15 mm
D
t A bi
Ordering Information: Si7884DP-T1
7
D
6
D
J
J
0.0095 @ V
a
a
PowerPAK SO-8
0.007 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
GS
GS
1
S
(W)
N-Channel 40-V (D-S) MOSFET
= 10 V
= 4.5 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
20
17
(A)
Symbol
Symbol
T
R
R
R
V
V
J
I
I
P
P
, T
DM
thJC
I
I
AS
I
thJA
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D PWM Optimized for Fast Switching
D 100% R
APPLICATIONS
D Sychronous Rectifier
Package with Low 1.07-mm Profile
10 secs
Typical
G
4.7
5.2
3.3
1.2
g
20
16
19
52
N-Channel MOSFET
Tested
-55 to 150
D
S
"20
40
50
30
Steady State
Maximum
Vishay Siliconix
1.7
1.9
1.2
1.8
12
10
24
65
Si7884DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1
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