Si7892DP Vishay Intertechnology, Si7892DP Datasheet
Si7892DP
Manufacturer Part Number
Si7892DP
Description
N-channel 30-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7892DP.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7892DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7892DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71773
S-31727—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
8
ti
6.15 mm
D
Ordering Information: Si7892DP-T1
t A bi
7
D
6
D
J
J
a
a
0.0045 @ V
PowerPAK SO-8
0.006 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
GS
1
GS
S
(W)
= 4.5 V
N-Channel 30-V (D-S) MOSFET
= 10 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
25
22
(A)
Symbol
Symbol
T
R
R
R
V
V
J
I
P
P
, T
DM
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D Low Gate Charge
D 100% R
APPLICATIONS
D Synchronous Rectifier
Package with Low 1.07-mm Profile
G
10 secs
Typical
N-Channel MOSFET
4.5
5.4
3.4
1.0
25
20
18
50
g
Tested
-55 to 150
D
S
"20
30
60
Steady State
Maximum
Vishay Siliconix
1.6
1.9
1.2
1.5
15
12
23
65
Si7892DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1
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