Si7940DP Vishay Intertechnology, Si7940DP Datasheet - Page 2

• Manufacturer Part Number: Si7940DP
• Description: Dual N-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7940DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
b
8
4
0
0.0
Parameter
0.5
a
a
V
V
GS
DS
a
1.0
Output Characteristics
= 5 thru 2.5 V
- Drain-to-Source Voltage (V)
1.5
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
1.5 V
3.0
2 V
3.5
4.0
V
V
I
DS
D
DS
^ 1 A, V
= 6 V, V
I
F
= 9.6 V, V
V
V
V
V
V
V
V
GS
= 2.9 A, di/dt = 100 A/ms
DS
I
DS
Test Condition
DS
DS
GS
S
V
V
DS
DD
DD
= 2.9 A, V
w 5 V, V
= 4.5 V, I
= V
= 0 V, V
= 9.6 V, V
= 2.5 V, I
= 5 V, I
= 6 V, R
= 6 V, R
GEN
GS
GS
GS
= 4.5 V, I
, I
= 4.5 V, R
D
= 0 V, T
D
GS
GS
GS
D
D
= 11.8 A
= 250 mA
L
L
GS
= "8 V
= 11.8 A
= 9.8 A
= 6 W
= 6 W
= 4.5 V
= 0 V
= 0 V
D
20
16
12
J
G
= 11.8 A
8
4
0
= 55_C
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
0.6
0.5
20
1.0
T
25_C
C
= 125_C
0.014
0.020
Typ
0.77
11.5
3.2
2.5
32
30
50
60
25
40
S-31727—Rev. C, 18-Aug-03
1.5
Document Number: 71845
"100
Max
0.017
0.025
1.5
1.2
2.5
17
45
75
90
40
80
-55_C
1
5
2.0
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
2.5