MCH4009-TL-H ON Semiconductor, MCH4009-TL-H Datasheet

MCH4009-TL-H

Manufacturer Part Number

MCH4009-TL-H

Description

Specifications: Frequency - Transition: 25GHz ; Noise Figure (dB Typ @ f): 1.1dB @ 2GHz ; Current - Collector (Ic) (Max): 40mA ; DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V ; Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max):

Manufacturer

ON Semiconductor

Datasheet

1.MCH4009-TL-H.pdf (13 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCH4009-TL-H

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 13
Download datasheet (56Kb)

Ordering number : ENA0389

MCH4009

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : GG

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Reverse Transfer Capacitance

Forward Transfer Gain

Noise Figure

1dB Compression Point

3rd Order Intercept Point

•

Low-noise use

High cut-off frequency : f T =25GHz typ (V CE =3V).

Low operating voltage.

High gain

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

: NF=1.1dB typ (f=2GHz).

: S21e

P O(1dB)

=17dB typ (f=2GHz).

Symbol

S21e

V CBO

V CEO

V EBO

NPN Epitaxial Planar Silicon Transistor

UHF to X Band Low-Noise Amplifier

and OSC Applications

I CBO

I EBO

OIP 3

Tstg

h FE

Cre

P C

I C

f T

SANYO Semiconductors

V CB =5V, I E =0A

V EB =1V, I C =0A

V CE =1V, I C =5mA

V CE =3V, I C =20mA

V CB =1V, f=1MHz

V CE =1V, I C =5mA, f=2GHz

V CE =3V, I C =20mA, f=2GHz

V CE =1V, I C =5mA, f=2GHz

V CE =3V, I C =20mA, f=2GHz

MCH4009

Conditions

82306 / 53106AB MS IM TB-00002266

DATA SHEET

min

Ratings

typ

0.15

13.5

Ratings

1.1

--55 to +150

max

120

150

120

No. A0389-1/13

3.5

2.5

1.0

1.5

dBm

GHz

Unit

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