MCH5810 Sanyo Semiconductor Corporation, MCH5810 Datasheet

MCH5810

Manufacturer Part Number

MCH5810

Description

Mosfet : P-channel Silicon Mosfet SBD : Schottky Barrier Diode DC / DC Converter Applications

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH5810.pdf (6 pages)

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Ordering number : ENN8194

MCH5810

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Marking : QK

(*1) : When designing a circuit using this product, that this P-channel MOSFET has a gate (oxide film) protection diode connected

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage(*1)

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[SBD]

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

•

Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011)

contained in one package facilitating high-density mounting.

[MOSFET]

•

[SBD]

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Short reverse recovery time .

Low forward voltage .

only between its gate and source.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

MOSFET : P-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

DC / DC Converter Applications

Symbol

V RRM

V GSS

V RSM

V DSS

I FSM

Tstg

I DP

Tch

P D

I D

I O

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

50Hz sine wave, 1 cycle

MCH5810

Conditions

0.8mm) 1unit

12505PE TS IM TB-00001111

Ratings

--55 to +125

--0.4

--1.6

150

--30

0.6

--9

No.8194-1/6

Unit

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