MCH5811 Sanyo Semiconductor Corporation, MCH5811 Datasheet

MCH5811

Manufacturer Part Number

MCH5811

Description

Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH5811.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

MCH5811-TL-E

Manufacturer:

SANYO

Quantity:

8 000

Current page: 1 of 6
Download datasheet (45Kb)

Ordering number : ENN8059

MCH5811

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Marking : QM

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[SBD]

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

•

Composite type with a N-channel sillicon MOSFET (MCH3405) and a schottky barrier diode (SS10015M)

contained in one package facilitating high-density mounting.

[MOSFET]

•

[SBD]

•

Low ON-resistance.

Ultrahigh-speed switching.

Short reverse recovery time.

Low forward voltage.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

General-Purpose Switching Device

Applications

Symbol

V RRM

V GSS

V RSM

V DSS

I FSM

Tstg

I DP

Tch

P D

I D

I O

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

50Hz sine wave, 1 cycle

MCH5811

Conditions

0.8mm) 1unit

D1004 TS IM TB-00000604

Ratings

--55 to +125

150

1.5

0.8

No.8059-1/6

Unit

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