MCH5809 Sanyo Semiconductor Corporation, MCH5809 Datasheet - Page 2

• Manufacturer Part Number: MCH5809
• Description: N-channel Silicon Mosfet DC / DC Converter Applications
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Electrical Connection
Switching Time Test Circuit
[MOSFET]
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
P.G
4V
0V
PW=10 s
D.C. 1%
5
1
V IN
Parameter
2
V IN
G
50
4
3
(Top view)
V DD =15V
D
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
S
I D =800mA
R L =18.75
V (BR)DSS
R DS (on)1
R DS (on)2
MCH5809
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
V F 1
V F 2
yfs
Qg
V R
I R
t rr
C
t r
t f
V OUT
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =800mA
I D =800mA, V GS =4V
I D =400mA, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =10V, V GS =4V, I D =1.5A
V DS =10V, V GS =4V, I D =1.5A
V DS =10V, V GS =4V, I D =1.5A
I S =1.5A, V GS =0
I R =0.5mA
I F =0.3A
I F =0.5A
V R =10V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
MCH5809
trr Test Circuit
[SBD]
Conditions
Duty 10%
10 s
50
--5V
100
min
0.4
1.3
30
30
10
Ratings
typ
0.52
0.52
0.35
0.42
165
210
130
2.2
2.2
0.9
22
16
20
23
29
20
9
max
0.40
0.47
215
295
200
1.3
1.2
10
10
t rr
1
No.7525-2/5
Unit
m
m
nC
pF
pF
pF
nC
nC
pF
ns
ns
ns
ns
ns
V
V
S
V
V
V
V
A
A
A