STM9435 Weitron Technology, STM9435 Datasheet - Page 2

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STM9435

Manufacturer Part Number
STM9435
Description
Surface Mount P-channel Enhancement Mode Mosfet
Manufacturer
Weitron Technology
Datasheet

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Note:
http://www.weitron.com.tw
Dynamic
Electrical Characteristics
Switching
Static
V
Gate-Drain Charge
V
Drain-Source Diode Forward Voltage
Turn-Off Time
Fall Time
Total Gate Charge
V
Gate-Source Charge
V
Turn-On Delay Time
V
Rise Time
V
V
V
V
Drain-Source Breakdown Voltage
V
Gate-Source Leakage Current
V
Zero Gate Voltage Drain Current
V
Drain-Source On-Resistance
V
Forward Transconductance
V
Input Capacitance
V
Output Capacitance
V
Reverse Transfer Capacitance
V
Gate-Source Threshold Voltage
V
V
On-State Drain Current
V
DS
DS
DS
DS
GEN
GS
GEN
GEN
GEN
GS
DS
DS
DS
GS
GS
DS
DS
DS
DS
DS
=-15V, I
=-15V, I
=-15V, I
=-15V, I
=0V, I
=0V, I
=0V, V
=-24V, V
=-10V, I
=-4.5V, I
=-5V, I
=-15V, V
=-15V, V
=-15V, V
WEITRON
=V
=-5V, V
1. Surface Mounted on FR4 Board t 10sec.
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
=-10V,V
=-10V,V
=-10V,V
WT9435M
=-10V,V
GS
S
(2)
, I
D
=-1.7A
GS
D
D
D
=-250 uA
D
D
D
GS
D
=-5.3A
=-5.3A, V
=-5.3A, V
=-250 uA
D
=-5.3A, V
GS
GS
GS
GS
=-5.3A, V
= 20V
=-5.3A
=-4.2A
=-10A
DD
DD
DD
DD
-
(3)
+
=0V
=0V, f=1MHZ
=0V, f=1MHZ
=0V, f=1MHZ
Characteristic
=-15V, I =--1A, R =15
=-15V, I =--1A, R =15
=-15V, I =--1A, R =15
=-15V, I =--1A, R =15
(3)
GS
GS
GS
GS
< _
=-4.5V
=-10V
=-10V
=-10V
D
D
D
D
L
L
L
L
< _
< _
,R
,R
,R
,R
GEN
GEN
GEN
GEN
(T A =25 C Unless otherwise noted)
=6
=6
=6
=6
Symbol
V
r
t
V
t
d(off )
(BR)DSS
I
DS (
C
C
D(on)
C
d
2/6
GS (th)
I
g
Qgs
I
Qgd
V
DSS
t
t
Qg
GSS
rss
iss
(
oss
fs
on
r
f
SD
on
)
)
Min
-20
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-0.84
11.7
-1.5
582
125
37
23
10
2.1
2.9
45
5.7
75
86
9
-
-
-
-
5
-
+
Max
-1.2
-2.5
100
-1
85
-
-
-
-
-
-
-
-
-
-
-
-
-
-
01-Jul-05
Unit
mΩ
nA
F P
uA
A
S
V
V
nS
nS
nS
nc
nc
nS
nc
V

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