R5009ANX ROHM Electronics, R5009ANX Datasheet
R5009ANX
Manufacturer Part Number
R5009ANX
Description
10V Drive Nch MOSFET; Package: TO-220FM; Constitution materials list: Packing style: bulk; Package quantity: 500;
Manufacturer
ROHM Electronics
Datasheet
1.R5009ANX.pdf
(6 pages)
10V Drive Nch MOSFET
Silicon N-channel MOSFET
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum tempterature allowed
○
Channel to case
c
www.rohm.com
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
Type
R5009ANX
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
R5009ANX
2009 ROHM Co., Ltd. All rights reserved.
Package
Code
Basic ordering unit (pieces)
DD
Parameter
=50V, R
Parameter
G
=25Ω, Starting, Tch=25°C
Continuous
Pulsed
Continuous
Pulsed
GSS
) guaranteed to be ±30V.
Symbol
V
V
Tstg
Tch
E
I
I
I
P
Bulk
500
DSS
GSS
I
I
DP
SP
AS
AS
D
S
D
−
Rth(ch-c)
Symbol
∗3
∗1
∗3
∗1
∗2
∗2
−55 to +150
Limits
500
150
±30
±36
4.5
5.4
±9
36
50
9
Limits
2.5
Unit
mJ
1/5
°C
°C
W
V
V
A
A
A
A
A
°C/W
Unit
Dimensions (Unit : mm)
Inner circuit
(1)Base
(2)Collector
(3)Emitter
(1) Gate
(2) Drain
(3) Source
TO-220FM
(1)
(2)
2.54
1.3
∗1 Body Diode
(1)
∗1
10.0
(2) (3)
1.2
2.54
(3)
0.8
φ 3.2
0.75
4.5
2.8
2.6
2009.02 - Rev.A
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