STK0160 AUK, STK0160 Datasheet - Page 3

• Manufacturer Part Number: STK0160
• Description: Advanced Power MOSFET
• Manufacturer: AUK

DataSheet4U.com
www.DataSheet4U.com
DataSheet
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Note ;
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous source current
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=20mH, I
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
4
U
.com
Characteristic
Characteristic
AS
=0.4A, V
DD
=50V, R
①
G
④
④
④
=25Ω
Symbol
Symbol
R
V
BV
Coss
t
Crss
t
Ciss
DS(ON)
I
I
GS(th)
Q
V
d(on)
d(off)
Q
I
Q
g
Q
DSS
GSS
I
t
t
t
SM
SD
rr
DSS
gd
S
fs
r
gs
f
rr
g
KSD-T0H008-001
DataSheet4U.com
I
I
V
V
V
V
V
V
I
V
I
Integral reverse diode
in the MOSFET
V
I
di
D
D
D
D
s
DS
DS
GS
DS
GS
DD
DD
GS
=0.4A, V
=250µA, V
=250µA, V
=0.4A, R
=0.4A
s
/dt=100A/us
=600V, V
=0V, V
=10V, I
=10V, I
=0V, V
=0V, I
=300V, V
=300V, V
Test Condition
Test Condition
S
GS
DS
=0.2A
GS
D
D
G
=0.2A
=0.2A
=±30V
=25V, f=1MHz
=25Ω
GS
DS
GS
=0V
GS
GS
=0
= V
=0V
=10V
=10V
GS
③
③
④
④
Min.
600
Min
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.59
Typ.
160
0.95
22.5
11.5
150
8.8
4.3
4.5
0.9
1.3
20
27
27
-
-
-
-
-
-
-
STK0160
Max
Max.
0.4
1.6
1.4
±100
225
5.0
9.4
6.4
6.7
1.3
1.9
-
-
30
1
-
-
-
-
-
-
(Ta=25°C)
(Ta=25°C)
Unit
Unit
uC
ns
nA
nC
µA
pF
ns
A
V
Ω
V
V
S
3