STK0240 AUK, STK0240 Datasheet - Page 3

• Manufacturer Part Number: STK0240
• Description: Advanced Power MOSFET
• Manufacturer: AUK

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DataSheet
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Note ;
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous source current
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=20mH, I
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
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Characteristic
Characteristic
AS
=0.6A, V
DD
=50V, R
①
G
④
④
④
=25Ω
Symbol
Symbol
R
V
BV
Coss
t
Crss
t
Ciss
DS(ON)
I
I
GS(th)
Q
V
d(on)
d(off)
Q
I
Q
g
Q
DSS
GSS
I
t
t
t
SM
SD
rr
DSS
gd
S
fs
r
gs
f
rr
g
KSD-T0H009-001
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I
I
V
V
V
V
V
V
I
V
I
Integral reverse diode
in the MOSFET
V
I
di
D
D
D
D
s
DS
DS
GS
DS
GS
DD
DD
GS
=0.6A, V
=250µA, V
=250µA, V
=0.6A, R
=0.6A
s
/dt=100A/us
=400V, V
=0V, V
=10V, I
=10V, I
=0V, V
=0V, I
=200V, V
=200V, V
Test Condition
Test Condition
S
GS
DS
=0.3A
GS
D
D
G
=0.3A
=0.3A
=±30V
=25V, f=1MHz
=25Ω
GS
DS
GS
=0V
GS
GS
=0
= V
=0V
=10V
=10V
GS
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③
③
④
④
Min.
400
Min
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.64
Typ.
180
127
4.2
1.4
4.9
8.5
3.9
3.9
4.6
1.1
1.7
25
-
-
-
9
-
-
-
-
STK0240
Max
Max.
0.6
2.4
1.4
±100
37.5
190
5.0
5.0
7.4
6.9
-
-
1
-
-
-
-
-
-
-
-
(Ta=25°C)
(Ta=25°C)
Unit
Unit
uC
ns
nA
nC
µA
pF
ns
A
V
Ω
V
V
S
3
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