STK12C68-M Simtek, STK12C68-M Datasheet
STK12C68-M
Related parts for STK12C68-M
STK12C68-M Summary of contents
Page 1
... MIL-STD-883 / SMD # 5962-94599 DESCRIPTION The Simtek STK12C68 fast static RAM (40, 45 and 55ns), with a nonvolatile EEPROM element incor- porated in each static memory cell. The SRAM can Power Down EEPROM read and written an unlimited number of times, while to independent nonvolatile data resides in EEPROM ...
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... STK12C68-M ABSOLUTE MAXIMUM RATINGS Voltage on typical input relative –0.6V to 7.0V SS Voltage on DQ and .–0. 0-7 Temperature under bias . . . . . . . . . . . . . . . . . . . . . . – 125 C Storage temperature – 150 C Power dissipation .1W DC output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15mA (One output at a time, one second duration) DC CHARACTERISTICS ...
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... STK12C68-40M PARAMETER MIN AVAV 3 t AVQV 5 t AXQX 2 t AVAV 1 t ELQV 6 t ELQX 4 t GLQV 8 t GLQX 4-55 STK12C68 5.0V 10%) CC STK12C68-45M STK12C68-55M UNITS MAX MIN MAX MIN MAX ...
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... STK12C68-M WRITE CYCLES #1 & #2 SYMBOLS NO. PARAMETER #1 #2 Alt Write Cycle Time AVAV AVAV Write Pulse Width WLWH WLEH Chip Enable to End of Write ELWH ELEH Data Set-up to End of Write DVWH DVEH Data Hold After End of Write ...
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... These parameters guaranteed but not tested. Note n: HSB is an I/O that has a weak internal pullup basically an open drain output meant to allow STK12C68- ganged together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other STK12C68-M HSB pins. ...
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... STORE or RECALL will still be initiated. Note s: W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW throughout. Addresses #1 through #6 are found in the MODE SELECTION table. Address #6 determines whether the STK12C68-M performs a STORE or RECALL . Note t: E must be used to clock in the address sequence for the Software STORE and RECALL cycles ...
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... The STK12C68-M has two separate modes of opera- tion: mode and nonvolatile mode. In SRAM mode, the memory operates as a standard fast static . In nonvolatile mode, data is transferred from RAM to (the operation) or from STORE SRAM EEPROM to (the operation). In this mode RECALL EEPROM SRAM functions are disabled. ...
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... V CALL again rises above V . SWITCH If the STK12C68 WRITE state at the end of power-up RECALL , the SRAM data will be corrupted. To help avoid this situation, a 10K Ohm resistor should be connected between W and system V HARDWARE PROTECT The STK12C68-M offers hardware protection against ...
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... SWITCH to pull HSB ; if HSB doesn't actually get below V LOW the part will stop trying to pull HSB AutoStore ™attempt. LOW AVERAGE ACTIVE POWER The STK12C68-M has been designed to draw signifi- cantly less power when E is (chip enabled) but the LOW V V CAP ...
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... STK12C68-M STK12C68 - 5962-94599 ORDERING INFORMATION Temperature Range M = Military (-55 to 125 degrees C) Access Time 40 = 40ns 45 = 45ns 55 = 55ns Package C = Ceramic 28 pin 300-mil DIP with gold lead finish K = Ceramic 28 pin 300-mil DIP with solder DIP finish L = Ceramic 28 pin LCC Retention / Endurance ...