BGA2801 Philips Semiconductors (Acquired by NXP), BGA2801 Datasheet - Page 2

• Manufacturer Part Number: BGA2801
• Manufacturer: Philips Semiconductors (Acquired by NXP)

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
V
BGA2801
Product data sheet
Symbol Parameter
V
I
G
RL
RL
CC
CC
CC
p
in
out
= 3.3 V; Z
supply voltage
supply current
power gain
input return loss
output return loss
Characteristics
S
= Z
L
= 50
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BGA2801
Symbol
V
I
P
T
T
P
Symbol
R
Ω
CC
stg
j
CC
tot
drive
th(j-sp)
; P
i
=
−
30 dBm; T
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
Parameter
supply voltage
supply current
total power dissipation
storage temperature
junction temperature
drive power
All information provided in this document is subject to legal disclaimers.
amb
= 25
Rev. 1 — 17 August 2010
Marking code
*E8
Conditions
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
°
C; measured on demo board; unless otherwise specified.
Conditions
RF input AC coupled
T
sp
= 90 °C
Conditions
P
tot
= 200 mW; T
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
sp
= 90 °C
MMIC wideband amplifier
Min
3.0
12.2
21.6
21.7
21.5
15
15
10
13
14
10
BGA2801
Min
3.0
-
-
−40
-
-
© NXP B.V. 2010. All rights reserved.
Typ
3.3
14.3
22.2
22.4
23.0
17
17
12
17
15
12
Typ
300
Max
3.6
55
200
+125
125
−16.5
Max
3.6
16.3
22.8
23.1
24.4
19
19
19
22
16
15
Unit
K/W
Unit
mA
mW
°C
°C
dBm
V
2 of 18
Unit
V
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB