CR12AM Mitsubishi Electronics America, Inc., CR12AM Datasheet

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CR12AM

Manufacturer Part Number
CR12AM
Description
Mitsubishi Semiconductor (thyristor) Medium Power Use Non-insulated Type, Glass Passivation Type
Manufacturer
Mitsubishi Electronics America, Inc.
Datasheet

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APPLICATION
Switching mode power supply, ECR, motor control
MAXIMUM RATINGS
V
V
V
V
V
I
I
I
I
P
P
V
V
I
T
T
T (RMS)
T (AV)
TSM
2 t
FGM
CR12AM
RRM
RSM
R (DC)
DRM
D (DC)
GM
G (AV)
FGM
RGM
j
stg
• I
• V
• I
Symbol
Symbol
T (AV)
GT
DRM
..........................................................................30mA
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state
RMS on-state current
Average on-state current
Surge on-state current
I
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
2 t
......................................................................... 12A
..............................................................400V/600V
for fusing
Parameter
Parameter
Commercial frequency, sine half wave, 180 conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
400
500
320
400
320
8
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
Conditions
Voltage class
OUTLINE DRAWING
VOLTAGE
CLASS
TYPE
NAME
3
2 4
1
c
=91 C
2.5
1
2
3
4
MEDIUM POWER USE
10.5 MAX
1
CATHODE
ANODE
GATE
ANODE
600
720
480
600
480
CR12AM
12
2 3
TO-220
2.5
–40 ~ +125
–40 ~ +125
1.0
0.8
4
Ratings
18.8
12.0
360
544
case temperature
Measurement point of
0.5
2.0
3.6±0.2
10
5
6
2
0.5
Dimensions
4.5
Feb.1999
Unit
Unit
A
in mm
W
W
V
V
V
V
V
A
A
A
V
V
A
2
C
C
g
s
1.3
2.6

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