BSP152 Philips Semiconductors (Acquired by NXP), BSP152 Datasheet - Page 3

• Manufacturer Part Number: BSP152
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 mm
STATIC CHARACTERISTICS
T
April 1995
V
I
I
P
T
T
R
V
V
R
I
C
C
C
Switching times (see Figs 2 and 3)
t
t
SYMBOL
D
DM
j
DSS
on
off
Y
V
I
stg
j
DS
tot
(BR)DSS
GS(th)
th j-a
= 25 C unless otherwise specified.
DS(on)
iss
oss
rss
N-channel enhancement mode vertical
D-MOS transistor
SYMBOL
GSS
fs
GSO
SYMBOL
drain-source voltage
gate-source voltage
DC drain current
peak drain current
total power dissipation
storage temperature
operating junction temperature
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
drain-source leakage current
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
from junction to ambient; note 1
PARAMETER
PARAMETER
PARAMETER
I
I
I
V
I
V
f = 1 MHz
V
V
I
V
I
V
D
D
D
D
D
D
V
DS
DS
DS
DS
GS
GS
open drain
up to T
3
= 10 A; V
= 1 mA; V
= 750 mA; V
= 750 mA; V
= 750 mA; V
= 750 mA; V
GS
= 160 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 0 to 10 V
= 10 to 0 V
= 40 V; V
amb
CONDITIONS
CONDITIONS
DS
= 25 C; note 1
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
= V
= 0
= 0;
= 0; f = 1 MHz
= 0; f = 1 MHz
= 25 V
= 0
= 10 V
= 0
= 50 V;
= 50 V;
GS
83.3 K/W
THERMAL RESISTANCE
200
1.5
400
MIN.
MIN.
65
100
42
8
Product specification
TYP. MAX. UNIT
200
40
550
3
1.5
+150
150
MAX.
BSP152
100
3.5
2.5
100
15
30
V
V
mA
A
W
UNIT
V
nA
V
nA
mS
pF
pF
pF
ns
ns
C
C
2
.