CXT3906 LEADFREE Central Semiconductor Corporation, CXT3906 LEADFREE Datasheet

CXT3906 LEADFREE

Manufacturer Part Number

CXT3906 LEADFREE

Description

Specifications: Manufacturer: Central Semiconductor ; Product Category: Transistors Bipolar (BJT) ; Transistor Polarity: PNP ; Collector- Emitter Voltage VCEO Max: 40 V ; Emitter- Base Voltage VEBO: 5 V ; Maximum DC Collector Current: 0.2 A ; DC Coll

Manufacturer

Central Semiconductor Corporation

Datasheet

1.CXT3906_LEADFREE.pdf (2 pages)

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MAXIMUM RATINGS: (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CEV

I BL

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

SILICON TRANSISTORS

COMPLEMENTARY

SURFACE MOUNT

TEST CONDITIONS

V CE =30V, V EB =3.0V

I C =10μA

I C =1.0mA

I E =10μA

I C =10mA, I B =1.0mA

I C =50mA, I B =5.0mA

I C =10mA, I B =1.0mA

I C =50mA, I B =5.0mA

V CE =1.0V, I C =0.1mA

V CE =1.0V, I C =1.0mA

V CE =1.0V, I C =10mA

V CE =1.0V, I C =50mA

V CE =1.0V, I C =100mA

CXT3904 NPN

CXT3906 PNP

SOT-89 CASE

SYMBOL

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT3904,

CXT3906 types are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for small

signal general purpose and switching applications.

MARKING: FULL PART NUMBER

T J, T stg

V CBO

V CEO

V EBO

Θ JA

P D

I C

0.65

MIN

100

6.0

CXT3904

MAX

0.20

0.30

0.85

0.95

300

CXT3904

6.0

-65 to +150

200

104

0.65

1.2

MIN

100

5.0

w w w. c e n t r a l s e m i . c o m

CXT3906

R7 (23-February 2010)

CXT3906

MAX

0.25

0.40

0.85

0.95

300

5.0

UNITS

°C/W

°C

Related parts for CXT3906 LEADFREE

CXT3906 LEADFREE Summary of contents

Page 1

... V CE =1.0V =100mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3904, CXT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. ...

Page 2

... CXT3904 NPN CXT3906 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =20V =10mA, f=100MHz =5.0V =0, f=1.0MHz =0.5V =0, f=1.0MHz =10V =1.0mA, f=1.0kHz =10V ...

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