2SD716 Wing Shing Electronic, 2SD716 Datasheet
2SD716
Manufacturer Part Number
2SD716
Description
Silicon Epitaxial Planar Transistor ( General Description )
Manufacturer
Wing Shing Electronic
Datasheet
1.2SD716.pdf
(1 pages)
2SD716
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
ELECTRICAL CHARACTERISTICS
LIMITING VALUES
GENERAL DESCRIPTION
SYMBOL
V
V
I
I
P
V
V
t
SYMBOL
I
I
V
V
h
f
C
t
t
t
SYMBOL
V
V
V
I
I
P
T
T
Silicon NPN high frequency, high power transistors
C
CM
f
CBO
EBO
on
s
f
C
B
T
FE
CESM
CEO
tot
CEsat
F
stg
j
CESM
CEO
EBO
tot
(BR)CEO
CEsat
c
http://www.wingshing.com
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
SILICON EPITAXIAL PLANAR TRANSISTOR
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
CONDITIONS
V
T
I
I
CONDITIONS
V
Tmb 25
CONDITIONS
V
V
I
I
I
I
V
C
F
C
C
C
C
mb
BE
CB
EB
CB
BE
=1mA
= 3.0A
= 3.0A; I
= 3.0A; I
= 1A; V
= 1A; V
=5V
=100V
= 0V
= 0V
= 10V
25
CE
CE
B
B
= 0.3A
= 0.3A
= 5V
= 12V
TO-3P(I)D
MIN
MIN
MIN
100
1.5
-55
50
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
MAX
MAX
100
100
250
150
100
100
150
150
2.0
0.2
0.2
60
1.5
60
6
2
2
-
5
6
-
UNIT
UNIT
UNIT
MHz
mA
mA
pF
W
us
us
us
W
V
V
A
A
V
V
V
V
V
V
V
A
A
s
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