2SB549 NEC Electronics Inc., 2SB549 Datasheet
2SB549
Manufacturer Part Number
2SB549
Description
Pnp/npn Silicon Epitaxial Transistor FOR Low-frequency Power Amplifiers
Manufacturer
NEC Electronics Inc.
Datasheet
1.2SB549.pdf
(4 pages)
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
FE2
Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%
Marking
h
CLASSIFICATION
FE2
Parameter
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
40 to 80
S
FOR LOW-FREQUENCY POWER AMPLIFIERS
PNP/NPN SILICON EPITAXIAL TRANSISTOR
P
P
T
Symbol
T
V
V
60 to 120
(Ta = 25°C)
(Tc = 25°C)
h
h
I
I
Symbol
CE(sat)
BE(sat)
C
I
CBO
EBO
f
FE1
FE2
C(pulse)
V
V
V
I
T
ob
C(DC)
T
T
CBO
CEO
EBO
R
stg
j
2SB548, 549/2SD414, 415
*
V
V
V
V
I
I
V
V
C
C
CB
EB
CE
CE
CE
CB
= −500/500 mA, I
= −500/500 mA, I
= −80/80 V, I
= −3.0/3.0 V, I
= −5.0/5.0 V, I
= −5.0/5.0 V, I
= −5.0/5.0 V, I
= −10/10 V, I
2SB548/
2SD414
100 to 200
−80/80
−55 to +150
Q
−100/120
−5.0/5.0
−0.8/0.8
−1.5/1.5
150
1.0
DATA SHEET
10
−100/100
2SB549/
2SD415
Conditions
E
E
C
C
C
C
= 0
= 0, f = 1.0 MHz
B
B
= 0
= −2.0/2.0 mA*
= −200/200 mA*
= −100/100 mA
160 to 320
= −50/50 mA*
= −50/50 mA*
P
Unit
°C
°C
W
W
V
V
V
A
A
SILICON POWER TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
MIN.
20
40
Electrode Connection
−0.4/0.3
−0.9/0.9
70/45
25/15
TYP.
90
−1.0/1.0
−1.0/1.0
−2.0/2.0
−1.5/1.5
MAX.
320
©
MHz
Unit
µ A
µ A
pF
V
V
1998
2002
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2SB549 Summary of contents
Page 1
... Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16141EJ2V0DS00 Date Published April 2002 N CP(K) Printed in Japan DATA SHEET SILICON POWER TRANSISTOR PACKAGE DRAWING (UNIT: mm) 2SB548/ 2SB549/ Unit 2SD414 2SD415 −100/120 V −80/80 −100/100 V − ...
Page 2
TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° C) Note Note aluminum board for heatsink 2. No insulating board 3. Silicon grease coating 4. Horizontal level With infinite heatsink Without te heatsink Temperature T (°C) Note Tc ...
Page 3
WR (PLWWHU 9ROWDJH 9 9 &( &ROOHFWRU &XUUHQW , $ & &ROOHFWRU WR %DVH 9ROWDJH 9 9 &% Data Sheet D16141EJ2V0DS 2SB548, 549/2SD414, 415 &ROOHFWRU &XUUHQW , $ & :LWK KHDWVLQN IRUFHG DLU FRROLQJ &ROOHFWRU &XUUHQW , $ & ...
Page 4
The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...