BD9673EFJ-E2 ROHM Electronics, BD9673EFJ-E2 Datasheet - Page 17

• Manufacturer Part Number: BD9673EFJ-E2
• Description: Specifications: Type: Step-Down (Buck) ; Output Type: Adjustable ; PWM Type: Current Mode ; Synchronous Rectifier: Yes ; Number of Outputs: 1 ; Voltage - Output: 1 V ~ 29.4 V ; Current - Output: 1.5A ; Frequency - Switching: 300kHz ; Voltage - Input:
• Manufacturer: ROHM Electronics

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BD9673EFJ
© 2012 ROHM Co., Ltd. All rights reserved.
(12) About IC Pin Input
This IC is a Monolithic IC, and between each element, it has P
N layer of each element and this, the P-N junction is formed, and the parasitic element of each type is composed.
For example, like the diagram below, when resistor and transistor is connected to Pin,
On the composition of IC, depending on the electrical potential, the parasitic element will become necessary. Through
the operation of the parasitic element interference of circuit operation will arouse, and error, therefore destruction can
be caused. Therefore please be careful about the applying of voltage lower than the GND (P board) in I/O Pin, and the
way of using when parasitic element operating.
P Substrate
(Pin A)
○When GND＞(PinA) in Resistor, when GND＞(PinA), when GND＞(Pin B) in Transistor (NPN),
○Also, during GND＞(Pin B) in the Transistor (NPN), through the N layer of the other elements connected
N
the P-N junction will operate as a parasitic diode.
to the above-mentioned parasitic diode , the parasitic NPN Transistor will operation.
P
+
Resistor
N
P
Parasitic
Element
Fig.33 Example of simple structure of Bipolar IC
P
+
N
(Pin B)
Parasitic Element
N
P
+
17/18
C
Transistor (NPN)
B
+
N
N
isolation for element separation and P board. With the
GND
P
E
P Substrate
P
+
N
GND
(Pin A)
Technical Note
2012.02 - Rev.C
GND
Parasitic
Element