KSD1621 Fairchild Semiconductor, KSD1621 Datasheet

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KSD1621

Manufacturer Part Number
KSD1621
Description
Small Signal Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2002 Fairchild Semiconductor Corporation
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSB1121
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* Mounted on Ceramic Board (250mm
Electrical Characteristics
* Pulse Width=20 s, Duty Cycle 1%
h
V
V
V
I
P
P
T
T
BV
BV
BV
I
I
h
h
V
V
f
C
t
t
t
C
CBO
EBO
T
ON
STG
F
FE
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
C
CE
BE
ob
*
CBO
CEO
EBO
Symbol
(sat)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth product
Output Capacitance
* Turn On Time
* Storage Time
* Fall Time
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
2
x0.8mm)
100 ~ 200
T
a
R
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
Marking
KSD1621
I
I
I
V
V
V
V
I
I
V
V
V
I
I
C
C
E
C
C
B1
C
CB
BE
CE
CE
CE
CB
CC
SYX
=10 A, I
=1mA, I
=10 A, I
=1.5A, I
=1.5A, I
=0.5A, R
= -I
=4V, I
=20V, I
=2V, I
=2V, I
=10V, I
=10V, I
=12V, V
140 ~ 280
Test Condition
B2
=25mA
S
C
B
C
C
B
B
C
E
L
=0
=0
=75mA
=75mA
E
=0.1A
=1.5A
C
E
=0
=0
=25
BE
=0
=50mA
=0, f=1MHz
=5V
h
FE
grade
1. Base 2. Collector 3. Emitter
200 ~ 400
1
Min.
100
30
25
65
6
T
-55 ~ 150
Ratings
500
150
1.3
30
25
6
2
Typ.
0.18
0.85
150
500
19
60
25
SOT-89
Max.
280 ~ 560
100
100
560
0.4
1.2
Rev. A2, November 2002
U
Units
mW
W
V
V
V
A
C
C
Units
MHz
nA
nA
pF
ns
ns
ns
V
V
V
V
V

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KSD1621 Summary of contents

Page 1

... Output Capacitance Turn On Time Storage Time STG t * Fall Time F * Pulse Width=20 s, Duty Cycle 1% h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSD1621 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = =1mA ...

Page 2

... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 10 1 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1000 I = 10mA B 100 I = 8mA 6mA 4mA 2mA 0.6 0.8 1.0 0.01 3 ...

Page 3

... MAX. (Pulse MAX. ( Single Pulse Mounted on Ceramic Board 2 × 0.8mm) (250mm 0.01 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 1.6 1.2 0.8 0.4 0 100 50 100 150 200 C], AMBIENT TEMPERATURE a Figure 8. Power Derating Rev. A2, November 2002 ...

Page 4

... Package Dimensions 4.50 1.65 0.50 0.10 1.50 TYP 1.50 TYP ©2002 Fairchild Semiconductor Corporation SOT-89 0.20 0.10 C0.2 0.40 0.10 0.40 1.50 0.20 (0.40) +0.10 –0.05 Dimensions in Millimeters Rev. A2, November 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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