BFS25A Philips Semiconductors (Acquired by NXP), BFS25A Datasheet - Page 2

• Manufacturer Part Number: BFS25A
• Description: BFS25A; NPN 5 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
December 1997
It is designed for use in RF amplifiers
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
stg
j
Low current consumption
Low noise figure
Gold metallization ensures
excellent reliability
SOT323 envelope.
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
I
T
I
T
I
T
base
emitter
collector
C
C
c
c
amb
amb
amb
= 0.5 mA; V
= 0.5 mA; V
= 0.5 mA; V
= 1 mA; V
open emitter
open base
open collector
up to T
Code: N6
= 25 C
= 25 C
= 25 C
DESCRIPTION
s
= 170 C; note 1
2
s
CONDITIONS
= 170 C; note 1
CE
CE
CE
CONDITIONS
CE
= 1 V; f = 1 GHz;
= 1 V; f = 1 GHz;
= 1 V; f = 1 GHz;
= 1 V; T
j
= 25 C
handbook, 2 columns
50
3.5
MIN.
Top view
Fig.1 SOT323.
65
MIN.
80
5
13
1.8
Product specification
1
TYP.
8
5
2
6.5
32
150
175
MAX.
3
BFS25A
8
5
6.5
32
200
MBC870
MAX.
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT