BFS540 Philips Semiconductors (Acquired by NXP), BFS540 Datasheet - Page 2

• Manufacturer Part Number: BFS540
• Description: BFS540; NPN 9 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
2000 May 30
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
stg
j
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 package.
CBO
CEO
tot
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
UM
s
s
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN transistor in a SOT323 plastic
package.
PINNING
PIN
1
2
3
open emitter
open base
T
I
I
T
I
T
I
T
C
C
C
C
s
amb
amb
amb
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 10 mA; V
base
emitter
collector
open emitter
R
open collector
T
80 C; note 1
s
BE
= 25 C
= 25 C
= 25 C
DESCRIPTION
= 0
80 C; note 1
2
CONDITIONS
CE
CE
CE
CE
CONDITIONS
= 8 V; T
= 8 V; f = 1 GHz;
= 8 V; f = 900 MHz;
= 8 V; f = 900 MHz;
j
= 25 C
handbook, 2 columns
Marking code: N4.
100
MIN.
Top view
Fig.1 SOT323.
MIN.
65
Product specification
120
9
14
1.3
TYP.
1
20
15
2.5
120
500
150
175
3
MAX.
BFS540
20
15
120
500
250
1.7
MAX.
MBC870
2
V
V
V
mA
mW
UNIT
C
C
V
V
mA
mW
GHz
dB
dB
UNIT