EMC5DXV5T5G ON Semiconductor, EMC5DXV5T5G Datasheet

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EMC5DXV5T5G

Manufacturer Part Number
EMC5DXV5T5G
Description
Dual Common Base−collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Manufacturer
ON Semiconductor
Datasheet
1.EMC5DXV5T5G.pdf (11 pages)
EMC2DXV5T1,
EMC3DXV5T1,
EMC4DXV5T1,
EMC5DXV5T1
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2004
October, 2005 − Rev. 4
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
2
, − minus sign for Q
Rating
(T
A
1
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
Q1
ORDERING INFORMATION
Ux = Specific Device Code
M
G
3
4
MARKING DIAGRAM
= Date Code
= Pb−Free Package
http://onsemi.com
x = C, 3, E, or 5
5
CASE 463B
R1
R2
SOT−553
Ux M G
Publication Order Number:
2
G
R1
1
R2
EMC2DXV5T1/D
Q2
1
5

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EMC5DXV5T5G Summary of contents

Page 1

... The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1 series, two complementary BRT devices are housed in the SOT− ...

Page 2

... EMC3DXV5T5G EMC4DXV5T1 EMC4DXV5T1G UE EMC4DXV5T5 EMC4DXV5T5G EMC5DXV5T1 EMC5DXV5T1G U5 EMC5DXV5T5 EMC5DXV5T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. 250 200 150 100 50 0 −50 Transistor 2 − ...

Page 3

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 ELECTRICAL CHARACTERISTICS (T Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current ( Collector-Emitter Cutoff Current ( Emitter-Base Cutoff Current ( 5.0 ...

Page 4

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat) 4 ...

Page 5

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 6

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR −25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 4 ...

Page 7

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 ...

Page 8

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 ...

Page 9

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR 0.1 0. COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat) 12 ...

Page 10

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) ...

Page 11

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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