BU508DW Philips Semiconductors (Acquired by NXP), BU508DW Datasheet
BU508DW
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BU508DW Summary of contents
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... CONDITIONS ˚ 4 1 16kHz 16kHz Csat PIN CONFIGURATION CONDITIONS ˚C mb CONDITIONS - in free air 1 Product specification BU508DW TYP. MAX. UNIT - 1500 V - 700 125 W - 1 1.6 2 SYMBOL MIN ...
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... 100 mA 4 CONDITIONS I = 0.1 A 4.5 A mH;C Csat 1 B(end Product specification BU508DW MIN. TYP. MAX 1 2.0 700 - - - - 1 1 1.6 2.0 TYP. MAX 125 - = 6.5 - 0.7 - Rev 1.200 ...
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... July 1998 ICsat t IBend t IBend -VBB t Fig.3. Switching times test circuit ICsat 100 0.1 - IBM Fig.4. Typical DC current gain Product specification BU508DW + 150 v nominal adjust for ICsat 1mH D.U.T. LB 12nF BU508AD parameter V CE Rev 1.200 ...
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... PD% 120 110 100 Fig.9. Normalised power dissipation. C BU508AD 4. Product specification BU508DW bu508aw 0.5 0.2 0 1.0E-5 1.0E-3 1.0E f(t); parameter j-hs p Normalised Power Derating with heatsink compound ...
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... Philips Semiconductors Silicon Diffused Power Transistor Fig.10. Forward bias safe operating area. T (1) P line. tot max (2) Second-breakdown limits (independent of temperature). I Region of permissible DC operation. II Permissible extension for repetitive pulse operation. July 1998 < 25˚ Product specification BU508DW Rev 1.200 ...
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... Net Mass 3.5 21 max 4.0 max 15.5 min 2.2 max 3.2 max Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". July 1998 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.11. SOT429; pin 2 connected to mounting base. 6 Product specification BU508DW 5.3 max o 3.5 max 0.9 max Rev 1.200 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Product specification BU508DW Rev 1.200 ...