KSC839Y Fairchild Semiconductor, KSC839Y Datasheet

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KSC839Y

Manufacturer Part Number
KSC839Y
Description
Fm/am Radio RF AMP, Conv, OSC, IF AMP
Manufacturer
Fairchild Semiconductor
Datasheet
©2002 Fairchild Semiconductor Corporation
FM/AM RADIO RF AMP, CONV, OSC, IF AMP
• Current Gain Bandwidth Product : f
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
BE
CE
ob
CBO
CEO
EBO
Symbol
(on)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
=200MHz
T
40 ~ 80
a
=25 C unless otherwise noted
R
T
Parameter
a
=25 C unless otherwise noted
KSC839
I
I
I
V
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
=10 A, I
=100 A, I
=5mA, I
=10mA, I
=4V, I
=30V, I
=12V, I
=6V, I
=10V, I
=10V, I
Test Condition
70 ~ 140
B
C
C
C
O
=0
E
=0
C
B
C
E
=1mA
=0
E
=0
=1mA
=0, f=1MHz
=2mA
=1mA
=0
120 ~ 240
1. Emitter 2. Base 3. Collector
1
Min.
0.65
35
30
40
80
4
Y
-55 ~ 150
Value
100
250
150
35
30
4
Typ.
0.70
200
0.1
2.0
TO-92
Max.
0.75
400
0.1
0.1
0.4
3.5
200 ~ 400
Rev. A2, September 2002
G
Units
mW
mA
V
V
V
C
C
Units
MHz
pF
V
V
V
V
V
A
A

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KSC839Y Summary of contents

Page 1

... Base-Emitter On Voltage BE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC839 =200MHz T T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =5mA, I ...

Page 2

... CE(sat) 0.1 0.01 0 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 V =10V CE 100 [mA], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation 1000 100 ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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