IRG4PC50S-P International Rectifier Corp., IRG4PC50S-P Datasheet

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IRG4PC50S-P

Manufacturer Part Number
IRG4PC50S-P
Description
600v Dc-1 Khz Standard Discrete Igbt In A Sm To-247 Package
Manufacturer
International Rectifier Corp.
Datasheet
Benefits
Features
Features
Features
Features
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
• Standard: Optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-247AC package
• Surface Mountable
INSULATED GATE BIPOLAR TRANSISTOR
Absolute Maximum Ratings
Thermal Resistance
R
R
R
V
I
I
I
I
V
E
P
P
T
T
Generation 3
LM
parameter distribution and higher efficiency than
C
C
CM
industry-standard Generation 3 IR IGBT's
voltage and low operating frequencies ( < 1kHz)
ARV
J
STG
D
D
CES
GE
1
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Continuous Collector Current
Maximum Power Dissipation
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
Parameter
Parameter
G
n-channel
IRG4PC50S-P
Typ.
0.24
–––
–––
C
E
-55 to + 150
Max.
± 20
600
140
200
225
Standard Speed IGBT
140
70
41
20
78
V
@V
CE(on) typ.
Surface Mountable
Max.
V
0.64
GE
–––
40
CES
= 15V, I
TO-247
www.irf.com
= 600V
C
1.28V
05/14/02
Units
= 41A
Units
°C/W
mJ
W
°C
V
A
V

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IRG4PC50S-P Summary of contents

Page 1

... T Storage Temperature Range STG Max Reflow Temperature Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA 1 IRG4PC50S-P Standard Speed IGBT C V CES V CE(on) typ 15V n-channel Surface Mountable TO-247 Max. 600 ...

Page 2

... IRG4PC50S-P Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100  T = 150 15V Fig Typical Transfer Characteristics IRG4PC50S-P T ria lta 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PC50S ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case ...

Page 5

... SHORTED 100 0 Fig Typical Gate Charge vs.  100 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PC50S-P = 400V = 41A 40 80 120 160 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage 5.0 = Ohm = 15V = 480V  ...

Page 6

... IRG4PC50S 5 Ohm 150 C ° 480V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  1000 V = 20V 125 C J 100 10  SAFE OPERATING AREA 100 V CE Fig Turn-Off SOA ...

Page 7

... t=5µ IRG4PC50S-P 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig ...

Page 8

... IRG4PC50S-P TO-247AC Package Outline Dimensions are shown in millimeters (inches) 15 .90 (. . .40 (. 094 ) 2 .00 (. 079 ) 2 X 5.45 (. .40 (. .00 (.11 8) TO-247AC Part Marking Information ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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