IXFH76N06-11 IXYS Corporation, IXFH76N06-11 Datasheet
IXFH76N06-11
Manufacturer Part Number
IXFH76N06-11
Description
Hiperfettm Power Mosfets N-channel Enhancement Mode High Dv/dt, Low Trr, Hdmostm Family
Manufacturer
IXYS Corporation
Datasheet
1.IXFH76N06-11.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH76N06-11
Manufacturer:
IXYS
Quantity:
35 500
Part Number:
IXFH76N06-11
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
DM
AR
D25
D119
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
C
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C (Chip capability = 125 A)
= 119°C, limited by external leads
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 4 mA
G
, V
= 40 A
= 2 W
DS
= 0
TM
GS
= 10 kW
Family
DD
N06
N07
T
T
76 N06/N07-11
76 N06/N07-12
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
N06
N07
N06
N07
min.
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
2.0
60
70
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
typ.
1.15/10 Nm/lb.in.
±20
±30
304
100
360
175
300
60
70
60
70
76
76
30
2
5
6
max.
±100
100
500
3.4
11
12
V/ns
mW
mW
mJ
nA
mA
mA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
V
V
V
J
g
Features
Applications
Advantages
TO-247 AD
G = Gate,
S = Source,
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
60 V
60 V
70 V
70 V
V
DSS
DS (on)
HDMOS
D = Drain,
TAB = Drain
76 A 11 mW
76 A 12 mW
76 A 11 mW
76 A 12 mW
I
D25
TM
process
92785H (12/98)
(TAB)
R
DS(on)
1 - 4
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IXFH76N06-11 Summary of contents
Page 1
... TM HiPerFET Power MOSFETs N-Channel Enhancement Mode TM High dv/dt, Low t , HDMOS rr Preliminary data sheet Symbol Test Conditions 25°C to 175°C DSS 25°C to 175°C; R DGR Continuous GS V Transient GSM 25°C (Chip capability = 125 A) D25 119°C, limited by external leads ...
Page 2
... 25°C 150 125°C 250 ns J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFH 76 N07-11 IXFH 76 N07-12 TO-247 AD (IXFH) Outline Dim. Millimeter Inches Min. Max. ...
Page 3
Fig.1 Output Characteristics 100 V =10V ° 0.0 0.5 1 Volts DS Fig vs. Drain Current ds(on) ...
Page 4
Fig. 7 Gate Charge 40V 38A 1mA 100 150 200 Gate Charge - nCoulombs Fig. 9 Capacitance Curves 6000 5000 ...