NTE2955 NTE, NTE2955 Datasheet

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NTE2955

Manufacturer Part Number
NTE2955
Description
MOSFET N-Channel / Enhancement Mode High Speed Switch
Manufacturer
NTE
Datasheet
Application:
D C
Absolute Maximum Ratings: (T
Drain–Source Voltage (V
Gate–Source Voltage (V
Drain Current, I
Avalanche Drain Current (Pulsed, L = 200 H), I
Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
Isolation Voltage (AC for 1 minute, Terminal–to–Case), V
Electrical Characteristics: (T
Drain–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
S
Switch for CRT Display Monitor
Continuous
Pulsed
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
GS
N–Channel, Enhancement Mode
= 0V), V
= 0V), V
V
stg
ch
Symbol
D
R
ch
V
V
(BR)DSS
I
I
DS(on)
DS(on)
GS(th)
|y
GSS
DSS
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
High Speed Switch
= +25 C unless otherwise specified)
GS
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
GS
DS
DS
GS
GS
GS
th(ch–c)
NTE2955
MOSFET
= 0V, I
= 250V, V
= 10V, I
= 20V, V
= 10V, I
= 10V, I
= 10V, I
DA
D
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
D
D
= 1mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1mA
GS
= 5A
= 5A
= 5A
DS
= 0V
= 0
ISO
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Min
250
2.0
0.40
Typ
3.0
2.0
9.0
–55 to +150 C
–55 to +150 C
Max
0.52
1.0
4.0
2.6
10
3.91 C/W
2000V
250V
Unit
mA
32W
V
V
V
S
20V
10A
30A
10A
A

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NTE2955 Summary of contents

Page 1

... Gate–Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain–Source ON Resistance Drain–Source On–State Voltage Forward Transfer Admittance NTE2955 MOSFET High Speed Switch = +25 C unless otherwise specified 0V ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Diode Forward Voltage .114 (2.9) = +25 C unless otherwise specified) ch Symbol Test Conditions ...

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