NTE2960 NTE, NTE2960 Datasheet
NTE2960
Manufacturer Part Number
NTE2960
Description
MOSFET N-Channel / Enhancement Mode High Speed Switch
Manufacturer
NTE
Datasheet
1.NTE2960.pdf
(2 pages)
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (T
Drain–Source Voltage (V
Gate–Source Voltage (V
Drain Current, I
Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
Isolation Voltage, V
Electrical Characteristics: (T
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
Continuous
Pulsed
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ISO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
GS
N–Channel, Enhancement Mode
= 0V), V
= 0V), V
V
V
stg
ch
Symbol
D
R
ch
V
V
(BR)DSS
(BR)GSS
I
I
DS(on)
DS(on)
GS(th)
|y
GSS
DSS
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
High Speed Switch
= +25 C unless otherwise specified)
GS
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
DS
GS
DS
DS
GS
GS
GS
th(ch–c)
NTE2960
MOSFET
= 0V, I
= 0V, I
= 900V, V
= 10V, I
= 25V, V
= 10V, I
= 10V, I
= 10V, I
D
G
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
D
D
= 1mA
= 100 A
= 1mA
GS
= 3A
= 3A
= 3A
DS
= 0V
= 0
Min
900
2.0
4.2
30
–
–
–
–
1.54
4.62
Typ
3.0
7.0
–
–
–
–
–55 to +150 C
–55 to +150 C
Max
2.00
6.00
1.0
4.0
–
–
10
–
3.13 C/W
2000V
900V
Unit
mA
40W
V
V
V
V
S
30V
21A
A
7A
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NTE2960 Summary of contents
Page 1
... Gate–Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain–Source ON Resistance Drain–Source On–State Voltage Forward Transfer Admittance NTE2960 MOSFET High Speed Switch = +25 C unless otherwise specified 0V ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Diode Forward Voltage .114 (2.9) = +25 C unless otherwise specified) ch Symbol Test Conditions ...