PDTC143ZT Philips Semiconductors, PDTC143ZT Datasheet - Page 2
PDTC143ZT
Manufacturer Part Number
PDTC143ZT
Description
NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW
Manufacturer
Philips Semiconductors
Datasheet
1.PDTC143ZT.pdf
(8 pages)
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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package. PNP complement: PDTA143ZT.
MARKING
Note
1.
1999 May 21
PDTC143ZT
Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 k
respectively)
Simplification of circuit design
Reduces number of components and board space.
Especially suitable for space reduction in interface and
driver circuits
Inverter circuit configurations without use of external
resistors.
NPN resistor-equipped transistor
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
18
(1)
2
dbook, 4 columns
PINNING
PIN
Fig.1 Simplified outline (SOT23) and symbol.
1
2
3
Top view
Fig.2 Equivalent inverter symbol.
1
base/input
emitter/ground
collector/output
MGA893 - 1
3
1
2
DESCRIPTION
MAM097
2
1
Product specification
PDTC143ZT
R1
3
R2
3
2