M54562 Mitsubishi, M54562 Datasheet

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M54562

Manufacturer Part Number
M54562
Description
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Manufacturer
Mitsubishi
Datasheet

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M54562FP
Manufacturer:
MIT
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20 000
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M54562P
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Part Number:
M54562P
Manufacturer:
MIT
Quantity:
1 000
Part Number:
M54562P
Manufacturer:
MIT
Quantity:
20 000
DESCRIPTION
M54562P and M54562FP are eight-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54562P and M54562FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A spike-killer clamping diode is provided between
each output and GND. V
among the eight circuits.
The inputs have resistance of 8.5k , and voltage of up to
30V is applicable. Output current is 500mA maximum. Sup-
ply voltage V
The M54562FP is enclosed in a molded small flat package,
enabling space-saving design.
High breakdown voltage (BV
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = –20 to +75 C)
Output current-sourcing type
S
is 50V maximum.
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
S
and GND are used commonly
CEO
50V)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PIN CONFIGURATION
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
INPUT
INPUT
Package type 20P2N-A(FP)
Package type 18P4G(P)
8.5K
The eight circuits share the V
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
NC
V
V
20K
S
S
M54562P/FP
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
1.5K
7.2K
18
17
16
15
14
13
12
11
10
20
19
18
17
16
15
14
13
12
11
S
GND
GND
3K
and GND.
NC
O1
O2
O3
O4
O5
O6
O7
O8
O1
O2
O3
O4
O5
O6
O7
O8
NC : No connection
OUTPUT
OUTPUT
Unit :
OUTPUT
GND
V
Aug. 1999
S

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M54562 Summary of contents

Page 1

... The inputs have resistance of 8.5k , and voltage 30V is applicable. Output current is 500mA maximum. Sup- ply voltage V is 50V maximum. S The M54562FP is enclosed in a molded small flat package, enabling space-saving design. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP PIN CONFIGURATION IN1 ...

Page 2

... I = –100mA 25V 50V (all input –350mA 50V R Test conditions C = 15pF (note 1) L M54562P/FP Ratings –0.5 ~ +50 50 –0.5 ~ +30 –500 –500 50 1.79(P)/1.10(FP) –20 ~ +75 –55 ~ +125 Unit Limits + min typ max — — 100 — 1.75 2.4 — ...

Page 3

... M54562P/FP 50% 50% 50% ton toff Output Saturation Voltage Output Current Characteristics V = 10V 2. 75° 25° –20°C 0.5 1.0 1.5 2.0 2.5 (sat) (V) CE (M54562P) •Ta = 75° 100 Duty cycle (%) Aug. 1999 ...

Page 4

... Ta = 75° 25° –20°C 300 200 100 0 1.0 0 0.5 Forward bias voltage V Input Characteristics 20V 75° 25° –20° Input voltage V M54562P/FP •Ta = 75° 100 1.0 1.5 2.0 ( (V) I Aug. 1999 ...

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