BR24L04F-W Rohm, BR24L04F-W Datasheet

BR24L04F-W

Manufacturer Part Number

BR24L04F-W

Description

5128 bit electrically erasable PROM

Manufacturer

Rohm

Datasheet

1.BR24L04F-W.pdf (25 pages)

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Download datasheet (389Kb)

Memory ICs

512×8 bit electrically erasable PROM

BR24L04-W / BR24L04F-W / BR24L04FJ-W /

BR24L04FV-W / BR24L04FVM-W

The BR24L04-W series is 2-wire (I

∗ I

General purpose

10) High reliability fine pattern CMOS technology.

11) Endurance : 1,000,000 erase / write cycles

12) Data retention : 40 years

13) Filtered inputs in SCL

14) Initial data FFh in all address.

1) 512 registers × 8 bits serial architecture.

2) Single power supply (1.8V to 5.5V).

3) Two wire serial interface.

4) Self-timed write cycle with automatic erase.

5) 16byte Page Write mode.

6) Low power consumption.

7) DATA security

8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8

9) High reliability EEPROM with Double-Cell structure

Features

Applications

Absolute maximum ratings (Ta=25°C)

1 Reduced by 8.0mW for each increase in Ta of 1 C over 25 C.

2 Reduced by 4.5mW for each increase in Ta of 1 C over 25 C.

3 Reduced by 3.0mW for each increase in Ta of 1 C over 25 C.

4 Reduced by 3.1mW for each increase in Ta of 1 C over 25 C.

Supply voltage

Power dissipation

Storage temperature

Operating temperature

Terminal voltage

C BUS is a registered trademark of Philips.

Write

Read

Standby (5V) : 0.1µA (Typ.)

Write protect feature (WP pin).

Inhibit to WRITE at low V

Parameter

(5V) : 1.2mA (Typ.)

(5V) : 0.2mA (Typ.)

•

SDA for noise suppression.

Symbol

C BUS type) serial EEPROMs which are electrically programmable.

Topr

Tstg

BR24L04-W / BR24L04F-W / BR24L04FJ-W

300(SSOP-B8)

450(SOP-J8)

310(MSOP8)

0.3 to V

450(SOP8)

800(DIP8)

0.3 to 6.5

65 to 125

40 to 85

Limits

0.3

BR24L04FV-W / BR24L04FVM-W

Unit

1/25

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